1. features we declare that the material of product compliance with rohs requirements and halogen free. s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. low threshold voltage (vgs(th): 0.5v...1.5v) makes it ideal for low voltage applications. 2. device marking and ordering information 3. maximum ratings(ta = 25oc) C continuous ta = 25c C pulsed (tp 10s) 4. thermal characteristics total device dissipation, fr?5 board (note 1) @ ta = 25oc derate above 25oc thermal resistance, junctionCtoCambient(note 1) junction and storage temperature maximum lead temperature for soldering purposes, for 10 seconds 1. frC5 = 1.00.750.062 in. tl 260 oc oc/w o c ?55 +150 tj,tstg rja 556 LBSS138DW1T1G s-LBSS138DW1T1G power mosfet 200 mamps, 50 volts nCchannel sc-88 id 200 idm 800 lbss138dw1t3g j1 10000/tape&reel parameter symbol limits device gateCtoCsource voltage C continuous vgs 20 unit drainCsource voltage vdss marking shipping LBSS138DW1T1G j1 3000/tape&reel drain current vdc vdc madc parameter symbol limits 50 unit 225 mw mw/oc pd 1.8 sc88(sot - 363) leshan radio company, ltd. rev.b mar 2016 1/6
LBSS138DW1T1G, s-LBSS138DW1T1G power mosfet 5. electrical characteristics (ta= 25 oc ) off characteristics characteristic drainCsource breakdown voltage (vgs = 0, id = 250adc) zero gate voltage drain current (vgs = 0, vds = 25 vdc) (vgs = 0, vds = 50 vdc) gateCbody leakage current, forward (vgs = 20 vdc) gateCbody leakage current, reverse (vgs = - 20 vdc) on characteristics (note 2) gate threshold voltage (vds = vgs, id = 1.0madc) static drainCsource onCstate resistance (vgs = 2.75 vdc, id < 200 madc, (vgs = 5.0 vdc, id = 200 madc) forward transconductance (vds = 25 vdc, id = 200 madc, f = 1.0 khz) dynamic characteristics input capacitance (vds = 25 vdc, vgs = 0, f = 1.0 mhz) output capacitance (vds = 25 vdc, vgs = 0, f = 1.0 mhz) reverse transfer capacitance (vds = 25 vdc, vgs = 0, f = 1.0 mhz) switching characteristics 2.pulse test: pulse width 300 s, duty cycle 2.0%. gfs ms 100 - - pf pf ciss - 40 50 coss ciss - 12 25 - 3.5 5.0 pf typ. max. igssr - - -0.1 - - - - 0.1 adc adc adc ohms - - unit vdc 50 - - symbol min. 0.1 vdc 0.5 5.6 10 1.5 - 3.5 - ta = C40c to +85c) vgs(th) idss rds(on) - 0.5 - vbrdss igssf turn-on delay time (vdd = 30 vdc , id =200 madc) turn-off delay time td(off) td(on) ns - - 20 - - 20 leshan radio company, ltd. rev.b mar 2016 2/6
LBSS138DW1T1G, s-LBSS138DW1T1G power mosfet 6. electrical characteristics curves 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 -55 -5 45 95 145 vgs(th), variance(v) temperature( id=1ma 0 0.5 1 1.5 2 2.5 -55 -5 45 95 145 rds(on), drain - to - source resistance(normallized) temperature( ) vgs=2.75v,id=200ma vgs=5v,id=200ma 0 0.2 0.4 0.6 0.8 1 0 1 2 3 id,drain current(a) vgs,gate - to - source voltage(v) vds=10v 150 25 - 55 0 0.2 0.4 0.6 0.8 1 0 1 2 3 4 5 6 7 id,drain current(a) vds,drain - to - source voltage(v) vgs=3v vgs=3.25v vgs=2.75v vgs=2.5v vgs=3.5v on - region characteristics transfer characteristics rds(on) vs. temperature threshold voltage vs.temperature leshan radio company, ltd. rev.b mar 2016 3/6
LBSS138DW1T1G, s-LBSS138DW1T1G power mosfet 6.electrical characteristics curves(con.) 0 0.5 1 1.5 2 2.5 3 3.5 0.1 0.2 0.3 0.4 0.5 rds(on),drain - to - source resistance( ) id,drain current(a) vgs=10v 150 25 - 55 0 0.5 1 1.5 2 2.5 3 3.5 0.1 0.2 0.3 0.4 0.5 rds(on),drain - to - source resistance( ) id,drain current(a) vgs=5v 150 25 - 55 0 0.5 1 1.5 2 2.5 3 3.5 0.1 0.15 0.2 0.25 rds(on),drain - to - source resistance( ) id,drain current(a) vgs=2.75v 150 25 - 55 1.0e-08 1.0e-07 1.0e-06 1.0e-05 0 10 20 30 40 50 idss,drain - to - source leakage(a) vds,drain - to - source voltage(v) 150 125 idss vs. vds rds(on) vs. id rds(on) vs. id rds(on) vs. id leshan radio company, ltd. rev.b mar 2016 4/6
LBSS138DW1T1G, s-LBSS138DW1T1G power mosfet 6.electrical characteristics curves(con.) 0 10 20 30 40 50 0 5 10 15 20 25 30 c,capacitor(pf) vds(v) ciss coss crss 0.001 0.01 0.1 1 0 0.5 1 1.5 is,diode current(a) vsd,forward voltage(v) 150 25 - 55 body diode forward voltage capacitor vs.vds leshan radio company, ltd. rev.b mar 2016 5/6
LBSS138DW1T1G, s-LBSS138DW1T1G power mosfet 7.outline and dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions or gate burrs. 8.soldering footprint bbb 0.30 0.01 ccc 0.10 0.00 ddd 0.10 0.00 1.10 --- --- 0.043 2.00 2.20 0.07 0.078 0.086 0.004 0.90 1.00 0.027 0.035 0.039 0.20 0.25 0.006 0.008 0.01 0.006 0.009 0.15 0.22 a2 a1 0.70 d min nom max min nom 0.00 --- 0.10 0 --- c dim millimeters inches --- --- b 0.08 max a 0.15 1.15 1.25 1.35 0.045 0.049 0.053 0.65 bsc 0.026 bsc 0.003 2.00 2.10 2.20 0.078 0.082 0.086 1.80 l2 aaa 0.15 bsc 0.006 bsc 0.15 0.01 l 0.26 0.36 0.46 0.010 0.014 0.018 e e1 e leshan radio company, ltd. rev.b mar 2016 6/6
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